Piezotronic effect in AlGaN/AlN/GaN heterojunction nanowires used as a flexible strain sensor

• Jianqi Dong,
• Liang Chen,
• Yuqing Yang and
• Xingfu Wang

Beilstein J. Nanotechnol. 2020, 11, 1847–1853, doi:10.3762/bjnano.11.166

• impurity centers [4]. This is a widely discussed topic in the field of high electron mobility transistor (HEMT) research [5][6]. In order to further improve the physical properties of a 2DEG and optimize the performance of AlGaN/AlN/GaN-based HEMT devices, piezotronic effects are introduced to adjust the

A wideband cryogenic microwave low-noise amplifier

• Boris I. Ivanov,
• Dmitri I. Volkhin,
• Ilya L. Novikov,
• Dmitri K. Pitsun,
• Dmitri O. Moskalev,
• Ilya A. Rodionov,
• Evgeni Il’ichev and
• Aleksey G. Vostretsov

Beilstein J. Nanotechnol. 2020, 11, 1484–1491, doi:10.3762/bjnano.11.131

• of liquid helium [11][12][13][14][15][16] and are, usually, placed at the 4 K stage of dilution refrigerators. These amplifiers can be implemented using two modern semiconductor transistor technologies, that is, high-electron-mobility transistor (HEMT) technology, including GaAs and InP, and SiGe

• -electron-mobility transistor (HEMT); HEMT amplifier; microwave cryogenic amplifier; microwave superconducting circuit readout; superconducting qubit readout; Introduction Quantum microwave devices are widely used for different applications ranging from radio astronomy [1][2][3] to quantum information

• the presented frequency range. The amplifier is applicable for any type of cryogenic microwave measurements. As an example we demonstrate here the characterization of the superconducting X-mon qubit coupled to an on-chip coplanar waveguide resonator. Keywords: cryogenic low-noise amplifier; high

Cryogenic low-noise amplifiers for measurements with superconducting detectors

• Ilya L. Novikov,
• Boris I. Ivanov,
• Dmitri V. Ponomarev and
• Aleksey G. Vostretsov

Beilstein J. Nanotechnol. 2020, 11, 1316–1320, doi:10.3762/bjnano.11.115

• mobility transistor (HEMT) technology and SiGe bipolar heterojunction technology (HBT). Low-frequency amplifiers are usually applied as first stage of SQUID readout electronics [11][12] or as the readout of cryogenic bolometers [13]. In both cases the amplifiers have a working temperature of 300 K. Modern

• are widely used for superconducting circuit readout at a temperature of 4 K [4][5][6][7][8][9][10]. However, the operating frequency range of such amplifiers starts at 10 kHz or higher. This specific design of cryogenic amplifiers is mainly based on two technological concepts, i.e., high electron